The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1977
Filed:
Apr. 12, 1976
Applicant:
Inventors:
James B Compton, Los Gatos, CA (US);
Sam S Ochi, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03K / ;
U.S. Cl.
CPC ...
307251 ; 307255 ; 307304 ;
Abstract
A field effect transistor (FET) is designed to act as an off-on type switch by the control of a driver voltage applied to its gate electrode. A driver circuit, responsive to a toggling current, provides a control of gate electrode voltage. The circuit includes means for rapidly switching the FET on and off while drawing relatively low current in the off and on states. Improvements relate to means for speeding up turn on time and reducing charge transferred to the circuit being switched by the FET.