The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1977
Filed:
Nov. 26, 1975
Applicant:
Inventor:
Mike F Chang, Liverpool, NY (US);
Assignee:
General Electric Company, Syracuse, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156650 ; 148187 ; 148188 ; 156657 ; 156661 ; 156662 ; 357 50 ;
Abstract
Disclosed is a technique useful in the manufacture of semiconductor devices. A semiconductor wafer is provided and isolation regions are formed therein by the temperature gradient zone melting process. A mask is applied to the surface of the wafer, but the portions of the surface near the isolation regions are left exposed. An etching step follows which removes a small amount of material from the surface of the isolation regions to smooth irregularities formed there during the zone melting process.