The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1977
Filed:
Aug. 12, 1975
Noboru Fuse, Hyogo, JA;
Kenichi Muramoto, Hyogo, JA;
Tokyo Shibaura Electric Co., Ltd., Tokyo, JA;
Abstract
A vertical type junction field effect transistor is disclosed having a body of semiconductor material of a first conductive type, a source region of the first conductive type provided in a main face of the body and a drain region of the first conductive type disposed opposite to the source region. A gate region of a second conductive type opposite to the first conductive type is disposed in direct contact with the source region and surrounds the source region in the form of a closed loop. A channel region extends from the source region towards the drain region and has a varying width in the vicinity of the source region according to the change of a depletion layer upon voltage application to the gate region.