The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1977
Filed:
Nov. 24, 1975
Ho-Chung Huang, Princeton, NJ (US);
RCA Corporation, New York, NY (US);
Abstract
A method for fabricating a semiconductor device having a pair of laterally spaced metal contacts adjacent a source and a drain, respectively, both contacts being located on a principal surface of a monocrystalline semiconductor, the contacts being separated by a groove therebetween. An edge of each of the contacts is extended in a cantilevered fashion over the groove, and a channel for the semiconductor is located under the groove. First and second laterally spaced Schottky-barrier gates are located in the groove adjacent the channel. In the method, the two Schottky-barrier gates are formed by deposition of a wide single gate onto a principal flat surface of the groove. The wide single gate is divided lengthwise into two separate Schottky-barrier gate conducting means by removing a portion of the gate through a photolithographically defined slot in a layer of a resistant means such as a photoresist or an ion-beam resist.