Ion implanted magnetic bubble memory device having major and minor rows

Abstract

A magnetic bubble domain memory device employing a major row of contiguous regions for major loop bubble travel and a plurality of minor rows of contiguous regions for minor loop bubble travel, wherein the remainder of the magnetic domain-supporting layer in which the respective major and minor rows are provided includes ion-implanted regions. The edges of the ion-implanted regions adjacent the major and minor rows form rails to which magnetic bubble domains adhere and along which they may be propagated. The end region of each minor row is preferably positioned abreast a cusp between regions in the major row to effect zero degree phase transfer. Thin metallic loops are used for bubble generation and annihilation and, with respect to a Permalloy expansion detector, for replication. Metal masking improves the reliability of the boundaries between the non-implanted regions and the ion-implanted regions, especially with respect to the definition of the cusps between adjacent non-implanted regions in a row.