The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 1977
Filed:
Jul. 15, 1975
Hitachi, Ltd., , JA;
Abstract
A semiconductor switch comprising a PNPN switch having an equivalently four-layer structure of p, n, p and n regions and three PN junctions; a transistor; two impedance elements and a capacitive element, wherein the transistor and one of the impedance elements is connected in parallel to each other, the parallel circuit thus formed being connected between the p base and the cathode of the PNPN switch, the capacitive element is connected between the base of the transistor and the anode of the PNPN switch, and the other impedance element is connected between the base and the emitter of the transistor, so that the obtained semiconductor switch has a high dv/dt withstandingness independent of the potential at the anode or cathode and a high breakdown voltage, can be closed with a small control current and is adapted for high speed switching.