The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1977
Filed:
Feb. 03, 1976
Applicant:
Inventors:
Hajime Yagi, Tokyo, JA;
Tadaharu Tsuyuki, Isehara, JA;
Assignee:
Sony Corporation, Tokyo, JA;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 44 ; 357 40 ; 357 34 ; 357 48 ; 357 89 ;
Abstract
A semiconductor integrated circuit device having a construction of complementary PNP-NPN semiconductor devices in a monolithic integrated form. First and second N type epitaxial layers are formed on a common P type semiconductor substrate. A base region of the PNP transistor is produced by the diffusion of an impurity into the second epitaxial layer. The NPN transistor is formed as low emitter concentration type transistor and a part of the second epitaxial layer serves as the emitter region of the NPN transistor.