The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1977
Filed:
Nov. 21, 1975
Applicant:
Inventor:
Karl Goser, Munich, DT;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DT;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 35 ; 357 36 ; 357 15 ; 357 43 ;
Abstract
A pair of bipolar transistors are formed in a semiconductor substrate with each transistor having at least one emitter, one base and at least one collector. At least the base is in the form of a doped zone in the substrate. The two base zones are electrically conductively connected to one another and the transistors are constructed or arranged in the substrate in such a manner that in each case free boundary faces of the two base zones lie opposite one another. The base connection is formed by an additionally doped zone in the interspace between the base zones, the doped zone having the same type of doping as the base zones.