The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1977
Filed:
Dec. 03, 1975
George Marr, Cupertino, CA (US);
George Elwood Smith, Murray Hill, NJ (US);
Burroughs Corporation, Detroit, MI (US);
Bell Telephone Laboratories Incorporated, Murray Hill, NJ (US);
Abstract
An extremely short channel Field Effect Transistor (FET) is made by making a first ion implant through a polysilicon mask aperture, converting the surface of the polysilicon into SiO.sub.2 to constrict the aperture size and then making a second ion implant of the opposite type impurity through the constricted aperture. The SiO.sub.2 growth effectively moves the edge of the mask by a small controlled distance. This permits a small controlled spacing between the two ion implants, which is used for defining an extremely short FET channel. Alternatively, a bipolar transistor with a narrow base zone can be made by analogous processing.