The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 1977
Filed:
Jun. 24, 1976
Andreas Scheidweiler, Stafa-Uerikon, CH;
Otto Meier, Hombrechtikon, CH;
Cerberus AG, Mannedorf, CH;
Abstract
To render an ionization-type sensing element essentially immune to changes in ambient conditions, principally temperature or operating voltage, while still using low-current draining circuits to sense response of the ionization chamber of the sensor, the threshold response level of a field effect transistor (FET) is arranged to have approximately the same temperature response characteristic, within the range of ambient temperature considered, as the ionization cell so that the overall circuit or system combination of the cell and FET amplifier will have a response which is essentially independent of ambient temperature or similar conditions. The source path of the FET is connected to a voltage divider which is so dimensioned that the voltage division ratio (R.sub.2 /R.sub.1) is related to the temperature coefficient (.alpha.) of the base-emitter voltage of the FET and the temperature coefficient (.beta.) of the measuring ionization cell chamber: