The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 1977
Filed:
Jul. 08, 1976
Applicant:
Inventors:
Assignee:
Commissariat a l'Energie Atomique, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
3072 / ; 357 16 ; 357 24 ; 357 61 ; 357 63 ; 357 91 ;
Abstract
Asymmetrical potential wells are created in surface zones of a first doped semiconductor forming a substrate and are of greater depth at the downstream end than at the upstream end in order to ensure unidirectional transfer of the minority carriers. Regions localized at one extremity of the surface zones and constituting the potential wells are formed by a second semiconductor having a forbidden band width which is different from that of the first semiconductor.