The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 1977
Filed:
Aug. 09, 1976
Applicant:
Inventors:
Guenther Meusburger, Munich, DT;
Hartmut Runge, Kirchseeon, DT;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DT;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
156628 ; 29591 ; 148-15 ; 148188 ; 156643 ; 156649 ; 357 22 ; 357 91 ; 427 91 ;
Abstract
A process for producing an integrated circuit having a pair of complementary field effect transistors, one being a J-FET and the other being a MIS-FET. The process includes a series of masking and ion implantation steps carried out in part for both transistors at the same time. The doping of the region between the source and drain is increased for the MIS-FET at the same time that the doping of the channel of the J-FET is increased in order to control the threshold voltage of the MIS-FET.