The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1977
Filed:
Oct. 15, 1975
Hajime Yagi, Tokyo, JA;
Tadaharu Tsuyuki, Isehara, JA;
Sony Corporation, Tokyo, JA;
Abstract
An NPN-type bipolar transistor is disclosed which has an additional P-type conductivity in its emitter region. The current-amplification factor h.sub.FE of the transistor is high when the additional region is electrically floated, while the amplification factor h.sub.FE is lower when the additional region is supplied with an emitter potential. The device is so designed and constructed that the transistor factor h.sub.FE can be variably controlled over a wide range. The transistor operates as an h.sub.FE controlled transistor. A thyristor is also disclosed which includes a cathode, a gate, and an electrically floated base electrode and which has an additional region formed in the cathode. This additional region is used as a second gate in addition to an ordinary gate, and either of the gates may be used for ON- and OFF- operations.