The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1977
Filed:
Oct. 07, 1975
Hajime Yagi, Tokyo, JA;
Tadaharu Tsuyuki, Isehara, JA;
Sony Corporation, Tokyo, JA;
Abstract
A semiconductor device having a high emitter-grounded current gain which includes an emitter region with the minority carrier diffusion length greater than its width and an additional region adjacent to the emitter region with the minority carrier diffusion length of this additional region greater than its width. The surface recombination velocity of the additional region is small. The minority carrier current injected from the additional region into the emitter balances that injected from the base into the emitter.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile