The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1977
Filed:
Aug. 16, 1976
Applicant:
Inventors:
G Sanjiv Kamath, Malibu, CA (US);
Bradley W Smith, Oxnard, CA (US);
Assignee:
Hughes Aircraft Company, Culver City, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 63 ; 357 61 ; 357 23 ; 357 49 ;
Abstract
Disclosed is a process for fabricating chromium-doped semi-insulating epitaxial layers of gallium arsenide which includes contacting a gallium arsenide substrate with a chromium-doped saturated solution of gallium arsenide in gallium and maintaining the solution at a relatively low liquid phase epitaxial (LPE) deposition temperature on the order of about 750.degree.-850.degree. C.
Kamath, G. (1977). Liquid phase epitaxial process for growing semi-insulating gaas layers (U.S. Patent No. 4032950). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4032950
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile