The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 1977
Filed:
Jun. 09, 1976
David A Hammond, Willoughby Hills, OH (US);
Carl F Swinehart, University Heights, OH (US);
The Harshaw Chemical Company, Cleveland, OH (US);
Abstract
Inorganic macrocrystals are grown free of occluded gases in a quiescent melt in a Bridgmann, Stockbarger, or similar furnace by melting down the crystal feed stock under a reduced atmosphere composed primarily of a low molecular weight gas such as hydrogen, helium or neon having the ability to diffuse through the melt at a greater rate than that of nitrogen. The gas can also include a minor amount of one or more active scavenger gases. During crystal growth, the gas atmosphere over the melt is altered by replacing the low molecular weight gas with an inert gas having a lower solubility in the melt than that of the low molecular weight gas or by increasing the pressure of the low molecular weight gas at a specified point in the growth process to significantly increase the concentration needed to form bubbles in the melt and to retard evaporation of the melt.