The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 1977
Filed:
Sep. 30, 1975
Applicant:
Inventor:
Noboru Horie, Kodaira, JA;
Assignee:
Hitachi, Ltd., , JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156628 ; 148187 ; 156657 ; 156659 ; 357 36 ;
Abstract
A method of manufacturing a semiconductor integrated circuit device including N-P-N transistors is characterized in that a base region of at least one of the N-P-N transistors is partially etched and removed with chemicals, thus to be formed with a depression, and that an emitter region opposite in the conductivity type to the base region is formed in the base region beneath the depression, whereby the at least one N-P-N transistor is made higher in the current gain h.sub.FE than the other N-P-N transistors being the main constituents of the integrated circuit device.