The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 1977
Filed:
Nov. 20, 1975
Toshinobu Matsutani, Tenri, JA;
Keiichi Nishida, Yamatokoriyama, JA;
Sharp Kabushiki Kaisha, Osaka, JA;
Abstract
A P-type diffusion layer is formed on an N-type silicon semiconductor wafer to establish a P-N junction in a solar cell, the diffusion layer being exposed to radiation. A pair of electrodes are formed on the surfaces of the diffusion layer and the semiconductor wafer in a desired configuration in order to provide output of electric energy generated by the solar cell. The diffusion layer is formed in such a manner that the layer has a thickness of around 3 .mu.m at areas where the electrode is formed and has a thickness of around or below 0.5 .mu.m at regions on which the electrode is not formed. With such an arrangement, radiation having a wavelength of about or shorter than 400 m.mu.m can be used for performing optoelectric generation.