The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 1977

Filed:

Jun. 13, 1974
Applicant:
Inventors:

Klaus Streit, Tubingen, DT;

Adolf Kugelmann, Leonberg, DT;

Hartmut Seiler, Reutlingen, DT;

Assignee:

Robert Bosch G.m.b.H., Stuttgart, DT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
307310 ; 307297 ; 3072 / ; 307303 ; 357 28 ; 357 44 ; 330 23 ; 330 / ;
Abstract

A main semiconductor element is placed on a circuit chip; additionally, a compensating semiconductor element is placed thereon, the compensating semiconductor element being a diode, a substrate diode, a Schottky diode, a transistor with shortcircuited base emitter junction, open base transistor, or a resistor, the additional semiconductor element having one terminal connected to the main semiconductor and the other terminal either to the substrate or to a source of potential at least as large as the potential of the main element. The leakage current to be bypassed may affect the main element directly, particularly when the main element is operated in digital on-off mode, or indirectly by passing a compensating current which affects another element such as an operational amplifier, or provides directly for additional current compensating for leakage current of the main element. Placing the additional element on the same substrate and making the element of approximately the same surface extent provides for comparable passage of compensating leakage current over a wide range of semiconductor crystal temperatures.


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