The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1977
Filed:
Aug. 10, 1976
Applicant:
Inventor:
Adir Jacob, Framingham, MA (US);
Assignee:
LFE Corporation, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C / ;
U.S. Cl.
CPC ...
156643 ; 252 791 ; 156345 ; 156659 ;
Abstract
A process step for use in the manufacture of thin film integrated circuits, to enable, in one process, the removal of all the photoresist material from underlying metallic films without concomitant degradation of the metallic surface and in another process, preferential etching of silicon nitrides and oxides without significant simultaneous etching of single crystal silicon. The material is exposed to a low pressure (few torr) rf generated 'cold' plasma, where the plasma is a homogeneous gaseous mixture of oxygen, a halogen containing compound and a noble gas.