The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1977
Filed:
Aug. 16, 1976
Applicant:
Inventors:
G Sanjiv Kamath, Malibu, CA (US);
Bradley W Smith, Oxnard, CA (US);
Assignee:
Hughes Aircraft Company, Culver City, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148171 ; 148 33 ; 252 / ; 357 18 ; 357 47 ;
Abstract
A process for forming a monolithic gallium arsenide structure having a plurality of electrically insulated gallium arsenide regions.
Kamath, G. (1977). Liquid phase epitaxial process for growing semi-insulating gaas layers (U.S. Patent No. 4028147). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4028147
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile