The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 1977
Filed:
Sep. 25, 1975
Applicant:
Inventors:
Erwin Jacobs, Munich, DT;
Gerhard Dorda, Munich, DT;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DT;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357 63 ; 357 88 ; 357 91 ;
Abstract
A static storage element in a field effect transistor arrangement, has source and drain zones in a semiconductor body and a gate insulation layer provided on the surface of the semiconductor body. A spatial region having a high lattice defect or trap density is formed in the gate insulation layer for storing a quantity of charge which can be altered by electromagnetic radiation.