The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 1977
Filed:
Aug. 26, 1976
G Sanjiv Kamath, Malibu, CA (US);
Hollen P Mitchell, Newbury Park, CA (US);
Hughes Aircraft Company, Culver City, CA (US);
Abstract
The specification describes a liquid phase epitaxial (LPE) crystal growth process wherein semi-insulating epitaxial layers of gallium arsenide (GaAs) are formed on selected substrates by dipping the substrates into a saturated solution of GaAs in gallium. Prior to exposing the substrates to the above solution, the substrates are shielded by a nonreactive container of a material possessing a high thermal conductivity which, when immersed in the solution, serves to establish a thermal equilibrium between the substrate and the solution. This insures good nucleation in and crystal growth of the high quality semiconductor layers grown, and these layers may be grown to minimum thicknesses on the order of 0.2 micrometers or less with excellent control.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile