The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1977
Filed:
Mar. 22, 1976
Savvas G Chamberlain, Waterloo, CA;
David H Harper, Kitchener, CA;
Canadian Patents and Development Limited, Ottawa, CA;
Abstract
A silicon photoelement imager which includes a photogeneration channel consisting of a layer of doped semiconductor material, located on a support substrate having a layer of oppositely doped semiconductor material. The photogeneration channel, in which carriers are photogenerated, has an optimum effective thickness of d/.pi., where d is the center to center spacing of the photoelements; while the support substrate is sufficiently thick to provide strength and rigidity to the device. The support substrate layer is further biased with respect to the photogeneration channel so as to drain and prevent any carriers produced in the support substrate from entering the photogeneration channel. This photogeneration channel substrate structure can be used to improve the spatial resolution of CCD and MOSFET imagers.