The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1977
Filed:
Oct. 14, 1975
Takeji Kimura, Hirakata, JA;
Michihiro Inoue, Hirakata, JA;
Masaharu Sato, Moriguchi, JA;
Shiro Horiuchi, Neyagawa, JA;
Matsushita Electric Industrial Co., Ltd., Osaka, JA;
Abstract
The channel current of an MOS transistor is controlled by varying the potential distribution in the source area. The source area is formed of a resistive material and provided with at least two electrodes on at least one of which a controlling voltage is applied. The current between the source and the drain terminals increases more rapidly than the linear change with respect to the increase in the voltage between the terminals, i.e. current-voltage characteristics are convex toward the lower direction. This device has excellent characteristics for use as a discharge impedance element in a sustain function circuit of an indirect keying or other circuit of an electronic musical instrument.