The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 1977

Filed:

Oct. 01, 1975
Applicant:
Inventors:

Shoei Kataoka, Tanashi, JA;

Yasuo Komamiya, Yokohama, JA;

Mitsuo Kawashima, Tokorozawa, JA;

Nobuo Hashizume, Higashikurume, JA;

Kazutaka Tomizawa, Kamagaya, JA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
307216 ; 3072 / ; 357-3 ; 357 15 ; 357 19 ;
Abstract

Disclosed is a bulk semiconductor device which employs a semiconductor element exhibiting negative conductivity under a high electric field. Said semiconductor element has at least two regions and at least one bridge portion and each region thereof is connected with the region adjacent thereto by a bridge portion. Means for controlling the lateral spatial growth of a high electric field domain is provided on or near each bridge portion. The growth of a high electric field domain generated in one of the regions into the adjacent region is controlled by applying a signal to said controlling means.


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