The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 1977
Filed:
Jan. 02, 1975
Applicant:
Inventor:
Gordon A Shifrin, Malibu, CA (US);
Assignee:
Hughes Aircraft Company, Culver City, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
2504 / ;
Abstract
Disclosed is an ion implantation process control system wherein the ion dosage in semiconductor wafers is continuously controlled. This control is achieved by controllably and incrementally integrating the ion beam current to provide a control signal, and then utilizing this control signal to provide controlled relative movement between the ion beam and the surface area upon which it fails.
Shifrin, Gordon. (1977). System for controlling ion implantation dosage in electronic materials (U.S. Patent No. 4021675). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4021675
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile