The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 1977
Filed:
Nov. 26, 1975
Applicant:
Inventors:
Thomas R Anthony, Schenectady, NY (US);
Mike F Chang, Liverpool, NY (US);
Harvey E Cline, Schenectady, NY (US);
Assignee:
General Electric Company, Syracuse, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148171 ; 148172 ; 148186 ; 148187 ; 148188 ; 148177 ; 148179 ; 252 / ; 252 / ;
Abstract
Disclosed is a technique useful in the manufacture of semiconductor devices. When a semiconductor device is manufactured by the temperature gradient zone melting process, it is subjected to a short diffusion cycle following thermomigration. The cycle smooths out discontinuities caused by breaks in wire migration and effectively seals and isolates occluded particles of the impurity remaining in the semiconductor body. The cycle is also useful for providing large area doped regions that cannot be formed by wire migration due to constraints on wire direction.