The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 1977
Filed:
Mar. 12, 1975
Curtis C Johnson, Sandy, UT (US);
Stanley D Moss, Kaysville, UT (US);
Jiri A Janata, Salt Lake City, UT (US);
The University of Utah, Salt Lake City, UT (US);
Abstract
A chemical sensitive field-effect transistor transducer capable of selectively detecting and measuring chemical properties of substances to which the transducer is exposed. The transducer includes a semiconductor substrate material having a certain doping polarity, a pair of spaced apart diffusion regions located at the surface of the substrate material and having a doping polarity opposite that of the substrate material, electrical insulator material overlying the diffusion regions and the surface of the substrate material lying between the diffusion regions, and a chemical selective system overlying the insulator material. The chemical selective system is adapted to interact with certain substances and thereby modulate an electric field produced in the substrate material between the diffusion regions. This modulation is dependent upon the chemical properties of the substances and provides a measure of those chemical properties. The chemical selective system may include various structures for measuring ion activity, immunochemical concentrations, reducible gas concentrations and the concentrations of enzymes and substrates.