The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1977
Filed:
Dec. 22, 1975
Savvas Georgiou Chamberlain, Waterloo, CA;
Lawrence Griffith Heller, Brewster, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A solid-state charge-coupled photoconductor for image scanning including a p-type substrate having a silicon dioxide layer on the surface thereof with the exception of one or more areas in which an n+ diffusion area is located. A polysilicon gate is located over the silicon dioxide layer and a second silicon dioxide layer is located over the polysilicon layer and the n+ diffusion area except for a portion where a first aluminum contact window is provided which extends through the second silicon dioxide layer to the surface of the n+ diffusion area and where a second aluminum contact window extends through the second polysilicon gate to the surface of the polysilicon gate. The photosensitivity of the device is electronically controlled due to the relatively small n+ layer which is reversed biased with respect to the larger gate area.