The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 1977

Filed:

May. 04, 1976
Applicant:
Inventors:

Ignaz Eisele, Ottobrunn, DT;

Hans Pfleiderer, Munich, DT;

Ekkehard Preuss, Munich, DT;

Assignee:

Siemens Aktiengesellschaft, Berlin and Munich, DT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 27 ; 357 55 ; 357 58 ; 357 63 ; 307308 ; 307309 ;
Abstract

A magnetic field sensitive diode including a silicon body, an n-injecting contact electrode and a p-injecting contact electrode located at spaced portions of the body, the body having opposed parallel surfaces having different recombination rates with respect to pairs of free charge carriers, the surface having the lower recombination rate consisting of silicon dioxide, the n-injecting contact electrode consisting of diffused in lithium, with substantially all of the acceptors in the silicon body being compensated by incorporated lithium ions, the silicon dioxide surfaces being essentially free of lithium. The invention also relates to a method of producing the improved structure.


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