The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1977
Filed:
Apr. 12, 1976
Applicant:
Inventors:
Robert A Pucel, Needham, MA (US);
James A Benjamin, Boxford, MA (US);
Assignee:
Raytheon Company, Lexington, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 357 15 ; 427 84 ;
Abstract
A high-frequency, high-power FET constructed upon a planar substrate with a repeated pattern of gate, source, and drain connections wherein any two are connected with metallization layers adjacent to and separated from the semiconductor substrate. The third element is interconnected with an overlay metallization layer separated from the lower two metallization layers by an insulating dielectric. The overlay layer is preferably grounded for minimum feedback capacitance.