The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1977
Filed:
May. 13, 1976
Applicant:
Inventor:
Masumi Fukuta, Kobe, JA;
Assignee:
Fujitsu Ltd., Kawasaki, JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 41 ; 357 45 ; 357 46 ; 357 55 ; 357 68 ;
Abstract
A high power field effect semiconductor device in which the gate length per given area of a semiconductor substrate is great and a channel is formed to extend from the main surface of the semiconductor substrate toward the other main surface to make current density as uniform as possible to thereby provide a high output power and which has a construction to allow ease in the attachment of electrodes.
Fukuta, Masumi. (1977). Field effect semiconductor device (U.S. Patent No. 4015278). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4015278
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile