The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 1977

Filed:

Aug. 01, 1975
Applicant:
Inventors:

Helmuth Murrmann, Ottobrunn, DT;

Ulrich Schwabe, Munich, DT;

Assignee:

Siemens Aktiengesellschaft, Berlin & Munich, DT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ;
Abstract

A combination insulating means comprised of a pn-junction overlaid with a SiO.sub.2 filling within a groove is provided between IC elements in a monolithic semiconductor device. Such combination insulating means electrically and mechanically isolate at least two areas of a n-conductive surface zone, each of which supports an IC element. The n-conductive surface zone is supported on a p-conductive silicon base and the free surface of the n-conductive surface zone is coated with a Si.sub.3 N.sub.4 layer, which during the various fabrication steps of the monolithic semiconductor device protects coated areas of the n-conductive surface zone from etchants, oxidation and from dopants.


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