The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1977
Filed:
Jul. 22, 1975
Applicant:
Inventors:
Gerard Nuzillat, Paris, FR;
Christian Arnado, Paris, FR;
Assignee:
Thomson-CSF, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148175 ; 148186 ; 357 15 ;
Abstract
A method of adjusting the threshold voltages of field effect transistors, in particular of SCHOTTKY gate field-effect transistors, is provided. During the process of manufacture of the transistor, the channel charge carrier density is modified by ion implantation. A monitoring device, in the form of a test transistor, is manufactured at the same time as the production transistors and on the same wafer thereas. An appendix of the test transistor makes it possible to measure the threshold voltage and saturation current, during ionic implantation.