The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1977
Filed:
Jun. 16, 1975
Applicant:
Inventors:
Motoaki Abe, Hiratsuka, JA;
Teruaki Aoki, Tokyo, JA;
Assignee:
Sony Corporation, Tokyo, JA;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 52 ; 357 23 ; 357 42 ; 357 54 ; 357 59 ;
Abstract
A Metal Insulator Semiconductor (MIS) field effect device has an oxygen-doped polycrystalline silicon layer on the field portion in order to prevent an unwanted parasitic inversion layer. The oxygen-doped polycrystalline silicon layer contains oxygen in the range of 2 to 40 atomic percent.