The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 1977
Filed:
Dec. 10, 1974
Omron Tateisi Electronics Co., Kyoto, JA;
Abstract
A semiconductor mechanical-electrical transducer is obtained by providing a mechanical force applying means on a semiconductor composite comprising a semiconductor substrate, an insulating film formed on said semiconductor substrate and a film of tin oxide deposited on said insulating film and having a barrier having a rectifying characteristic. Preferably, the material of said insulating film may be selected from a group consisting of SiO.sub.2, Si.sub.3 N.sub.4 and GeO.sub.2 and the thickness of the film may be chosen to be 15 to 80A, but preferably to be 20 to 60A and more preferably to be 20 to 40A. It was discovered that such composite shows an increased reverse current response to mechanical force applied to the composite in case where the thickness of the SiO.sub.2 film has been chosen to the said particular value range. Preferably, the main surface of the substrate is made uneven. It was also discovered that in such an embodiment a shearing stress is applied to the barrier, when the mechanical force is applied to the composite, in which case the conversion efficiency of the energy is enhanced as compared with a case where the main surface has been mirror-polished.