The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1977
Filed:
Jun. 20, 1973
Bernard W Boland, Scottsdale, AZ (US);
Motorola, Inc., Chicago, IL (US);
Abstract
An insulated gate field-effect transistor is fabricated to include an improved insulation layer comprising a film of silicon dioxide covered with a film of silicon nitride. The method of fabrication includes the thermal oxidation of a semiconductor silicon surface in a 'reducing' atmosphere. The use of hydrogen as a carrier gas for oxygen provides a thermally grown, pinhole-free oxide film having improved stability under conditions of heat cycling and electrical bias. The process permits a control of oxidation rate by adjusting the oxygen content of the gaseous mixture, rather than by the control of temperature. Best device characteristics are obtained by proceeding immediately with the vapor deposition of silicon nitride on the oxide, as a substantially continuous operation in the same reactor.