The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1977
Filed:
Aug. 18, 1975
Hitachi, Ltd., , JA;
Abstract
A thin-film field-emission electron source having an emitter within a minute cavity in a conductive substrate, an insulating layer covering the surface of the substrate except for the portion of the cavity, and a first anode layer on the insulating layer, wherein the substrate and the emitter are comprised as one body, and the insulating layer and the first anode layer overhang the cavity, except directly over the emitter. This electron source may be manufactured by the method comprising the steps of i) forming a sandwich structure of the substrate-insulating layer-first anode layer, ii) forming a closed loop opening at a predetermined position on the surface of the first anode layer, iii) etching the insulating layer with the use of the first anode layer as a mask and iv) forming an emitter and a cavity by etching the substrate with the use of the insulating layer as a mask. This thin-film field-emission electron source can be manufactured very readily and has good insulation between the emitter and the first anode layer.