The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1977
Filed:
Sep. 11, 1975
Hiroto Kawagoe, Kodaira, JA;
Hitachi, Ltd., , JA;
Abstract
A compensation circuit for electronic circuits such as pulse generator circuits which are suitable for MOSICS includes a resistor of high resistance and parallel-connected MOSFETs of the enhancement type and depletion type, respectively. The drain electrodes of the MOSFETs are connected to a power supply through the resistor, and are also connected to the gate electrode of load MOSFET of the depletion type which constitutes a load for a MOSFET of the enhancement type. To the gate of the former enhancement type MOSFET, a controlled bias voltage is applied from the connection point of MOSFETs connected in series between the power supply and ground. By employing the compensation circuit in pulse generator circuits, the instability of the oscillating periods due to changes in the ambient temperature and changes in the supply voltage is compensated. Also, the differences of oscillating periods are decreased among MOSICs.