The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 1977
Filed:
Jun. 20, 1975
Augustine Wei-Chun Chang, Wappingers Falls, NY (US);
Vincent Joseph Lucarini, Pleasant Valley, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A clamped epi-base NPN transistor with very short saturation time constant is obtained by ion implantation in the P-type base region to convert a portion thereof to N.sup.- conductivity type contiguous to the collector reach-through region. The converted region is contacted by an extended metal electrode which also contacts the base region. The metal electrode establishes ohmic contact to the base region and Schottky diode contact to the converted region and to the collector region connected thereto.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile