The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 1977
Filed:
Aug. 22, 1975
Claude Vergnolle, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
A field-effect transistor designed for high-power operation has a P.sup.+ substrate, preferably of gallium arsenide, topped by an N layer which in turn is covered by a much thinner N.sup.+ film, the layer and film being bisected by a serpentine trench so as to form a pair of interdigitated comb-shaped N.sup.+ segments overlain by metallic deposits which constitute a source and a drain electrode. The trench, advantageously produced by ion bombardment which also has a passivating effect on the surface areas thus exposed, cuts deep enough into the N layer to leave a channel whose conductivity is controlled by a gate electrode substantially coextensive therewith on the opposite substrate face. The prismatic substrate body is peripherally bounded by a mesa flank which may be passivated by a deposit of low-melting glass.