The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 1977
Filed:
Dec. 23, 1975
David G Howe, Greenbelt, MD (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A multifilament composite superconductor which comprises (1) a matrix she selected from the group consisting of a copper-gallium (Cu--Ga) alloy with a gallium content from 0.4 to 22 at.%, a copper-tin (Cu--Sn) alloy with a tin content from 1 to 11 at. %, and a copper-silicon (Cu--Si) alloy with a silicon content from 0.5 to 14 at. %; (2) multiple filaments embedded in said encasing matrix sheath and selected from the class consisting of a vanadium -gallium (V--Ga) alloy with a gallium content from 0.4 at. % to 12.5 at. %, a niobium-tin (Nb--Sn) alloy with a tin content from 0.1 at. % to 12.0 at. %, and vanadium-silicon (V--Si) alloy with a silicon content from 0.5 to 10 at. %; and (3) a continuous interfacial layer between said matrix and each filament of an A-15 compound selected from the class consisting of V.sub.3 Ga, Nb.sub.3 Sn, and V.sub.3 Si. A method for producing said multifilament composite superconductors by mechanical deformation of a multifilament coaxial cylinder consisting of filaments and matrix sheath which comprises a homogenization anneal of the filaments and the matrix rod before assembly thereof, a series of reductions followed by anneals, and a solid stage reaction between the filaments and matrix in vacuum or an inert atmosphere and at a temperature from about 475.degree. to 700.degree. C for the production of V.sub.3 Ga and V.sub.3 Si and at a temperature from about 525.degree. to about 850.degree. C for the production of Nb.sub.3 Sn.