The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 1977
Filed:
Dec. 17, 1975
Takaaki Aoki, Kanagawa, JA;
Paul Evrenidis, Raleigh, NC (US);
Ryo Igarashi, Shiga, JA;
Seiki Ogura, Raleigh, NC (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
This invention features the use of two paralleled insulated gate depletion channel field effect transistors (FET) having their gates connected one to the source voltage and one to the drain voltage to provide a linear resistance element. The actual resistance value can be controlled by selecting design parameters and can be extended by using a plurality of such elements in series to provide greater resistances and/or higher voltage capabilities or in parallel to provide greater current capacity. The described resistor is used as a cost and space saving alternate to discrete resistor components and is particularly useful as a part of an integrated circuit in analog type devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile