The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1976
Filed:
Jan. 16, 1976
Applicant:
Inventors:
Herbert Goronkin, Wenham, MA (US);
Richard W Aldrich, Liverpool, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 29580 ; 357 15 ; 357 22 ;
Abstract
A method is provided for fabricating a gridded Schottky barrier field effect transistor and to the transistor produced thereby. The transistor is constructed by means of a single high resolution mask which does not require alignment to any reference line. Utilizing the masking properties of an oxidation layer on the sides of the etched slots, platinum is deposited only at the bottom of the groove thereby eliminating the requirement of an additional photo-masking step or the necessity of subsequent removal of platinum from other surfaces of the wafer.