The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 1976

Filed:

Mar. 10, 1975
Applicant:
Inventors:

Albert Anthony Ballman, Woodbridge, NJ (US);

Ping King Tien, Chatham Township, Morris County, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
156619 ; 423593 ;
Abstract

A liquid phase epitaxial growth technique for growing lithium niobate films on lithium tantalate substrates involves growth from a flux system based on either lithium borate, lithium tungstate, tungsten oxide or potassium tungstate. Optical waveguiding occurs in films grown from the described flux systems.


Find Patent Forward Citations

Ballman, Albert. (1976). Technique for growth of thin film lithium niobate by liquid phase epitaxy (U.S. Patent No. 3998687). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/3998687

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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