The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1976
Filed:
Feb. 07, 1974
Applicant:
Inventor:
Anthony C Bonora, Palo Alto, CA (US);
Assignee:
Semimetals, Inc., Mountain View, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B01D / ; B01J / ;
U.S. Cl.
CPC ...
2327 / ; 156601 ; 1566 / ;
Abstract
In the Czochralsky method of crystal growing, a crystal or ingot is pulled from a melt. The control of the present invention will find particular application in the Czochralsky pulling of large crystals such as those of silicon which typically are 40 inches long and 3 inches in diameter. The control assures a uniform diameter over the entire length of the crystal as well as avoids the formation of 'flats' on the surface of the crystal. This is achieved by optically sighting the crystal melt interface and adjusting the sighting for variations in melt level.