The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1976
Filed:
Oct. 21, 1975
Wolfgang Hoehn, Kirchzarten, DT;
ITT Industries, Inc., New York, NY (US);
Abstract
This relates to a temperature-compensated zener diode arrangement in the form of a semiconductor integrated circuit which consists of several transistor structures disposed in a common semiconductor body and interconnected by deposited metallizations. The base-emitter pn junctions of the transistor structures are so connected in series with respect to the direction of the total current flowing during operation that some of them are operated in the reverse direction up to the breakdown region as zener diodes and the remainder in the forward direction as forward bias diodes. The emitter of the first transistor structure acting as a zener diode or the base of a transistor structure acting as a forward bias diode, as well as the collector of the latter transistor structure, are connected to the first external terminal. The emitter of the latter transistor structure, acting as a forward bias diode, is connected to the second external terminal. The transistor structures acting as zener diodes are disposed in a first isolating island of the semiconductor body and the transistor structures acting as forward biased diodes are disposed in additional isolating islands.