The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1976
Filed:
Mar. 31, 1975
Applicant:
Inventors:
Frank C Sulzbach, Dallas, TX (US);
Joseph B Horak, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
2502 / ; 350166 ; 357 30 ;
Abstract
Disclosed is silicon photodiode having a multilayer thin film optical filter deposited directly on the detecting surface thereof. The multilayer filter is an interference type filter designed to limit the normal response of a silicon photodiode so that its spectral response is essentially the same as that of the human eye. The multilayer filter is applied to the diode during fabrication using low cost mass production techniques. The multilayer filter materials are very durable and provide excellent passivation and environmental protection for the diode surface.