The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1976
Filed:
Sep. 08, 1975
Applicant:
Inventors:
Daniel Delagebeaudeuf, Paris, FR;
Didier Meignant, Paris, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 13 ; 357 33 ; 357 57 ; 3311 / ;
Abstract
A thermo-ionic diode with a very noise figure, using a special semiconductor structure, is provided. The structure comprises, upon a P.sup.+ doped silicon substrate, a succession of N-doped layers whose thicknesses and impurity ratios are designed to optimize the noise figure, a final P.sup.+ type layer covering the structure. The injecting junction of the diode is located at the transition between the said P.sup.+ layer and the nearest N type layer having a weak doping.